InSb/AlInSb quantum-well light-emitting diodes

نویسندگان

  • G. R. Nash
  • M. K. Haigh
  • H. R. Hardaway
  • L. Buckle
  • A. D. Andreev
  • N. T. Gordon
  • S. J. Smith
چکیده

We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1−xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well. © 2006 American Institute of Physics. DOI: 10.1063/1.2171647

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تاریخ انتشار 2006